ABSTRACT
Acknowledgment ................................................................................................ 197 References ............................................................................................................. 198
The ˆrst report of III-nitride growth on silicon dates back to the beginning ofmetalorganicvaporphaseepitaxyin1971whenManasevit,Erdmann,and SimpsongrewAlNonSisubstrates[Manasevit1971].Afteralongerphaseof inactivity,GaNgrowthonsiliconstartedagainasanichetopic,mostlymotivatedbythelowcostandscalabilityofsiliconandtoasmallerportionbythe possible integration with Si electronics. The latter also powered other III-V growthattheendofthe1980stotheearly1990s,which,exceptfortandem solarcells,wasnotabigsuccessbecauseofadislocationdensitytypically above108 cm−2, rarely lower and with single dislocations already destroying laser devices based on InP and GaAs.
