ABSTRACT
Solid-state compact ultraviolet (UV) and deep UV (DUV) light sources are useful in various sectors including medical research/health care, water/air puri£cation, equipment/personal decontamination, high-resolution photolithography, and white light generation by phosphor excitation [1,2]. AlN and Al-rich AlGaN alloys are highly suitable for these applications and are not easily replaced by any other semiconductors for various reasons. With a direct bandgap of ~6.1 eV, any emission wavelength between 362 and 207 nm can be obtained by simply tuning the alloy composition of AlGaN alloys. Furthermore, its wide bandgap and radiation tolerance permit AlN-based photodetectors to intrinsically suppress the visible background, so that the detectors can operate at room temperature without cooling. AlN has very low electron a¶nity, so that the electrons in its conduction band can be emitted easily into the vacuum, which makes AlN a promising material in £eld emission (FE) applications. Properties like DUV
2.1 Introduction ........................................................................................21 2.2 Band Structure, Transition Probability, and Polarization
2.7 Concluding Remarks ..........................................................................60 Acknowledgments ..........................................................................................61 References ........................................................................................................61
