ABSTRACT
Carbon nanotube (CNT) has some unique properties that are superior to some conventional semiconducting materials. The authors have developed a spectrum infrared (IR) sensor using a CNT which is capable to sense IR from near IR (NIR) middle-wave IR (MWIR) radiation in room temperature environment. This chapter provides an idea to design and fabricate CNT-based IR sensors. The band gap of the semiconducting material is an important property for many applications, such as optical detectors and solar cells. The CNT-based photosensing devices can be classified into three categories based on their structures. The first category is the basic structure with a pair of microelectrodes bridged by a CNT or CNT bundle/film. The second type of the CNT photosensing device is featured with the gate structure. The third type of the CNT photosensing device is a metal–insulator–semiconductor photodetector and photons, are detected by measuring the displacement photocurrent on the semiconductor.
