ABSTRACT
This chapter explores the preparation of a single crystal of ß-FeSi2 by and discusses temperature gradient solution growth techniques and the preparation of bulk polycrystalline ß-FeSi2 by the cold-pressing and sintering method. It describes the thermoelectric properties of the obtained ß-FeSi2 and shows that ß-FeSi2 is a good candidate for many civil applications. Studies on single crystalline ß-FeSi2 significantly extend understanding of the fundamental thermoelectric properties of the material. Thus, an industrial grade of comparatively low-purity starting materials used for thermoelectric purposes is available because the thermoelectric properties are structure insensitive. The effect of the variation of Si composition by Fe-contaminant on thermoelectric properties for sintered compacts FeSi2 should be investigated. The stoichiometric compound iron disilicide (FeSi2) is composed of environment-friendly, nontoxic, and abundantly available elements. ß-FeSi2 is called the “environment-friendly thermoelectric semiconductor” because of its environment-friendly elements, high heat and oxidation resistance, and relatively high thermoelectromotive force.
