ABSTRACT
Another experiment was also carried out by them to differentiate the contributions of thermionic current and tunneling current of the device under different temperatures. As reported previously, temperature dependence of subthreshold swing can be used to distinguish the contribution of thermionic current and tunneling current as thermionic current is highly temperatures dependent [20, 21]. Based on this, the band-to-band tunneling effect in CNT was confirmed. There are several advantages of CNTs being used as the active channel in the TFET. As reported by Appenzeller et al., band-toband-tunneling itself is not sufficient to achieve subthreshold swing of <60 mV/dec. One dimensionality of electronic transport and geometrical smallness of CNT are the main advantages of the CNT TFET to show a steep subthreshold swing [22]. It was found that the depletion lengths in a CNTFET with thin-gate dielectric can be so small that the tunneling current is significant [20].
