ABSTRACT
This chapter presents radiation hardening by design (RHBD) design techniques for mitigating total ionizing dose (TID) degradation, single event transients (SETs), single event upsets, and single event latchup. It provides the RHBD design concepts and describes how they work and what challenges exist with their implementation. RHBD techniques for TID are only really designed to mitigate effects on parasitic field oxide transistors in the circuit. With some simplification, TID radiation effects on CMOS transistors can be summarized by threshold voltage shifts, change in slope of the subthreshold current–voltage relationship, and reduction of drain current. For SET mitigation, RHBD design techniques can help reduce the probability of SETs being generated and causing errors. But, RHBD design techniques cannot eliminate the possibility that SETs are generated. SETs will be generated; it is the designer’s task to make sure their impact meets the design requirement.
