ABSTRACT
This chapter examines a variety of semiconductor microelectronics technologies and comment on their suitability to support various extreme environment applications. Silicon carbide (SiC) is an ideal semiconductor for power electronics due to its thermal conductivity and wide bandgap. SiC devices have the potential to operate at temperatures near 600°C, eliminating the need for supplementary cooling systems and cutting overall cost. Gallium nitride, on the other hand, has been used in optoelectronics for many years, attaining more developed manufacturing technology. The use of diamond-based microelectronics and sensor devices has been explored over the years; however, this technology remains in the research stage. Since single-event effect performance is, to a large degree, influenced by design only, a qualitative estimate of upset performance is provided, except for SiC power devices that have shown some susceptibility to gate rupture due to heavy ions.
