ABSTRACT
In order to simulate the actual environments, one must know the effects of the radiation on the critical electrical parameters. The most widely used radiation-sensitive materials in microelectronics are silicon and silicon dioxide. The most important effects of the radiation are ionization energy deposition and nonionization energy loss, or displacement damage dose (DDD). While most DDD testing is performed with neutrons, displacement damage can occur from protons, electrons, and heavy ions. The subject of Single-Event Effects covers a wide range of phenomena resulting from the interaction of single particles with microelectronic devices or circuits. A number of test methods have been developed to address these effects. For discrete devices, there is an American Society for Testing and Materials (ASTM) standard for measuring photocurrent, as well as burnout. The ASTM guide F980 for measuring rapid annealing from pulsed neutron sources was developed for nuclear weapon effects testing.
