ABSTRACT
In this chapter, the junctionless nanowire transistor is introduced
as an alternative device concept to the inversion mode nanowire
MOSFET. We first discuss the basic working principle based on an
analytical model for long thick nanowires. Then, we scale down the
wire radius and discuss the impact of size quantization on the low-
field mobility. Next, we also scale down the gate length to investigate
the purely ballistic junctionless nanowire and its equivalence to
the inversion mode MOSFET nanowire in this regime. Finally, we
consider an advanced transport model to investigate the short-
channel junctionless nanowire including strain.
