ABSTRACT
This chapter discusses how classical transport theories such as the
thermionic emission (Sze, 1981), can be used as a powerful tool for
the study and the understanding of themost complexmechanisms of
transport in fin field effect transistors (FinFETs). Bymeans of simple
current and differential conductance measurements, taken at differ-
ent temperatures and different gate voltages (VG ’s), it is possible to extrapolate the evolution of two important parameters such as the
spatial region of transport and the height of thermionic barrier at the
centre of the channel. Furthermore, if the measurements are used in
conjunction with simulated data, it becomes possible to also extract
the interface trap density of these objects. These are important
results, also because these parameters are extracted directly on
state-of-the-art devices and not in specially designed test structures.
The possible characterization of the different regimes of transport
that can arise in these ultra-scaled devices having a doped or an
undoped channel are also discussed. Examples of these regimes
are full body inversion and weak body inversion. Specific cases
demonstrating the strength of the thermionic tool are discussed in
Sections 10.2, 10.3, and 10.4.
