ABSTRACT
In May 2011 Intel announced the introduction of the tri-gate
architecture at the 22 nm technology node [1]. As such, Intel was
the first big player in the semiconductor industry to use a 3D device,
going from a pure 2D structure that had been introduced in 1960 [2]
and that had basically not changed much during almost five decades
of scaling to a new device architecture that was still a MOSFET but
with some new complexities and advantages: in this architecture the
gate is wrapped around a thin conducting channel, also called “fin.”