ABSTRACT
ZnO materials have attracted considerable attention worldwide for its optoelectronic devices and other applications due to its wide band gap of 3.37 eV and large exciton binding energy of 60 meV at room temperature [1-6]. Compared with traditional electronic devices based on GaN or other semiconductor materials, ZnO-based materials show clear advantages such as low cost, easy nano-structurization, special piezoelectric property, and compatibility with wet-chemical etching treatment. All of these are promising and suitable for fabrication of electronic devices such as UV light emission diode (LED), laser diode, and various UV sensor devices [7-11].
