ABSTRACT
Holger von Wenckstern, Rüdiger Schmidt-Grund, Carsten Bundesmann, Alexander Müller, Christof P. Dietrich, Marko Stölzel, Martin Lange, and Marius Grundmann
The functionality of many modern solid state devices is governed by appropriate design of heterojunctions. Semiconductor heterojunctions are essential in state of the art lightemitting diodes, solid state lasers, or high electron mobility ‹eld effect transistors [1]. The properties of the heterojunction itself depend on differences of material parameters (e.g., electron af‹nity, effective mass, and dielectric constant). Ternary semiconductor systems offer the possibility to tune these parameters continuously in a certain range without a
CONTENTS
10.1 Introduction ........................................................................................................................ 257 10.2 Structural Properties ......................................................................................................... 260
10.2.1 Wurtzite-Rocksalt Structural Phase Transition ................................................ 260 10.2.2 Lattice Constants .................................................................................................... 261
10.3 Infrared-Vacuum Ultraviolet Dielectric Function and Absorption Coef‹cient ........264 10.3.1 Phonons ................................................................................................................... 265 10.3.2 Dielectric Constants............................................................................................... 270 10.3.3 Refractive Index ..................................................................................................... 271 10.3.4 Fundamental Bandgap and Excitons .................................................................. 272
10.3.4.1 Temperature Dependence ......................................................................277 10.3.4.2 Pressure Dependence ............................................................................. 279
10.3.5 Higher Band-to-Band Transitions ....................................................................... 279 10.4 Doping of (Mg,Zn)O ..........................................................................................................280
