ABSTRACT
This chapter focuses on the features of epitaxial growth of zinc oxide (ZnO) on SiC as a route toward fabrication of hybrid light-emitting devices (LED). The imbalanced electron distribution and dangling atomic bonds are responsible for the columnar growth modes and related defects. It is also assumed, that the SiC substrate surface contains nanoscale fluctuations and scratches, which play an important role in the formation of defects in ZnO epilayers. The high-quality heterointerface requires primarily good surface morphology of a substrate. Moreover, such a substrate must be a pattern, creating a “driving force” for the further nanostructures growth. Thus, fabrication of aligned nanosized ZnO/SiC heterojunctions of high structural and interface quality may lead to a successful LED realization. Later, the influence of the temperature on the interface quality and photoluminescence properties was investigated for the ZnO/SiC heterostructures. The shift of the main peaks on the photoluminescence spectra was admitted with the strain development.
