ABSTRACT
This chapter presents progress of the hybrid light emitting diodes (LEDs) based on Zinc oxide (ZnO) nanowires and other inorganic/organic semiconductors. It provides an overview of the ZnO-nanowirebased hybrid LEDs from the perspectives of the device configuration, growth methods of ZnO nanowires, and the selection of p-type semiconductors. The chapter also presents the device performances and remaining issues. Devices based on the n-ZnO/p-Si thin-film heterojunctions have been widely studied, including applications as photodiodes and LEDs. The gradual red-shift in the electroluminescence spectra is related to the band gap reduction of ZnO, according to the reports both in theoretical calculation and experimental work. The adoption of organic semiconductors opens ways for making bendable light-emitting displays. The nanowires were grown by a carbothermal reduction method and were typically 10–40 µm long and 100–350 nm in diameter. ZnO nanowires are normally grown onto planar substrates by either chemical vapor deposition or chemical-bath growth methods.
