ABSTRACT
This chapter explores Zinc Oxide (ZnO)-based Diluted Magnetic Semiconductors (DMS) materials will be dealt with in detail with different dopants such as copper, chromium, and iron. It describes thin films of the materials have been synthesized by Radio frequency magnetron sputtering method and its microstructure and magnetic properties. A number of studies of magnetism in semiconductor oxide thin films doped with transition-metal (TM) have found evidence for RTFM. T. Dietl et al. predicted high-temperature ferromagnetism in (TM)-doped wide-band-gap semiconductors particularly in ZnO and GaN. This fact has motivated many researchers to study the properties of TM-doped semiconductors. ZnO has some advantages over GaN among which are the availability of fairly high-quality ZnO bulk single crystals and a large exciton binding energy. ZnO also has much simpler crystal-growth technology, resulting in a potentially lower cost for ZnO-based devices. ZnO-based DMSs have some advantages over others beca.
