ABSTRACT
Zinc oxide (ZnO) and its alloys are semiconductors that are used for applications such as transparent contacts for photovoltaics and light–emitting diodes, sensors, phosphors, and potentially lasers. ZnO has shown significant potential as a transparent transistor for displays and made tremendous progress for low-cost high-speed transistors. ZnO in particular is a very interesting material with respect to the dynamic range of precursors available for growth of films by Metalorganic chemical vapor deposition (MOCVD). MOCVD, and its variations, introduce precursors to a heated surface which generally drives the reaction that grows the desired film composition and structure. In designing an MOCVD system there are a great many considerations, including the chemistry to be used, the application for which the grown materials are to be used, substrate limitations, cost and supporting infrastructure. Horizontal systems are of the easiest type to enter the MOCVD technology arena.
