ABSTRACT
This chapter discusses the fundamental optical transitions in undoped Zinc Oxide (ZnO) including excitonic transitions, two electron satellites, and deep-level emissions. It describes the depth properties of ZnO and the optical properties of ZnO grown under various substrates and conditions. The chapter examines the growth ofp-type ZnO and optical characteristics explores the optical characteristics of polarity-controlled ZnO together with O- and Zn-face ZnO. It outlines the optical properties and carrier dynamics of the homoepitaxial and heteroepitaxial ZnO/ZnMgO multiple quantum well (QW). The optical properties of ZnO-based systems are associated with both intrinsic and extrinsic effects, which provide the basis of many important applications such as lasers, light-emitting diodes, and photodetectors. QW structures have been widely used in high-performance semiconductor optoelectronic devices. The internal quantum efficiency of ZnO-based photonic devices is strongly influenced by the luminescence yield of each constituent epilayer.
