ABSTRACT
The formation of nanoscale ripple patterns on solid surfaces by
low-energy ion sputtering has attracted a high level of interest in
the last few decades from the fundamental point of view as well
as for various technological applications. The interplay between
ion sputtering and different surface relaxation processes is thought
to be the origin of ripple formation. The size, shape, orientation,
and compositional modulation of the pattern can be controlled by
manipulating the ion beam parameters and sample temperature.
Recently, it has been shown that pre-roughened surface is also a
determining factor for the ripple development and its dynamics. This
chapter presents a comparative study of ripple formation on flat
and rough Si surfaces as a function of angle of ion incidence and
fluence.
