ABSTRACT
Silicon-based photonics has generated an increased amount of interest in recent years, mainly for optical telecommunications or for optical interconnects in high-performance microelectronic circuits. The development of elementary passive and active components (input/output couplers, hybrid sources, modulators, passive functions, and photodetectors) has reached such a performance level that the combination of these building blocks can lead to the development and commercialization of high-performance transceivers such as a new generation of active optic cables [1]. Photonics chips with active devices are connected to electronic drivers or ampliers and thus the integration challenge of silicon photonics with microelectronic circuits has been studied for a long time [2]. The rationale of silicon photonics is the reduction of the cost of photonic systems through the integration of photonic components and an electronic integrated circuit (EIC) on a common chip. In the longer term, the introduction of an optical network between cores of a high-performance circuit will require this cointegration for the
CONTENTS
13.1 Introduction ........................................................................................................................ 679 13.2 Integration with Metallic Bonding .................................................................................. 681 13.3 Integration above the Metallization Layer of the EIC ..................................................685
