ABSTRACT
The true potential of semiconductors, the basic material in transis-
tors, has been realized by adding dopants to tailor their electronic
properties; this has conventionally been achieved through a doping
process. Doping control is an essential requirement, particularly
when the device scale is in the deep sub-30 nm regime. In the
immediate future, scaled-down transistors will contain only a small
number of dopants in the channel, where a random distribution of
dopants will cause significant variations in transistor performances.
Future complementary metal-oxide-semiconductor (CMOS) tech-
nologies will require the placement of dopants in a predetermined
location, namely, a single-dopant control. This chapter introduces
deterministic doping, that is, a single-ion implantation method,
which enables us to implant dopant ions one by one into a fine semi-
conductor region until the desired number is reached. The technique
may increase the prospects for extending CMOS technologies and
enable single-dopant-based electronic applications.
