ABSTRACT
Resistance temperature detectors (RTDs) are temperature sensors that are composed of a metallic material. Thin film RTDs can be created with much smaller cross-sectional areas than wire-wound devices, so it is easier to achieve devices with higher nominal resistances. Finite element analysis was performed on the RTD structure to determine how much the temperature of the sensor will rise for a given current density. The thin film platinum temperature sensors were fabricated on glass substrates. RTDs constructed from several bulk metals have a well-defined characteristic equation. Although temperature measurements with RTDs may be limited, one beneficial use of the saturation feature of thin film RTDs could be their ability to limit current to a load. The experimental findings reveal that the electrical resistance of thin film RTDs changes linearly with temperature at low temperatures. After constructing the RTD computer model, the automatic mesh function was used to perfectly mesh the structure.
