ABSTRACT
Three types of capacitors are developed in order to meet the requirements for reduced board-level components: metal–oxide–semiconductor capacitors, poly–insulator–poly capacitors, and metal–insulator–metal (MIM) capacitors. This chapter describes the influence of carbon contamination on MIM capacitor performance. Besides, we have begun to develop an understanding of the physical nature of HfO2-based MIM device radiation damage. Temperature-dependent leakage current is observed for HfO2 films, for the range of temperature from room temperature to 350°C. The capacitance–voltage measurement of MIM capacitors before irradiation was conducted at room temperature. The chapter talks about the MIM structures were employed and radiation-introduced defects in HfO2 dielectric layer. Following irradiation, the annealing characteristics of the 35-nm HfO2 MIM devices were measured at room temperature. HfO2 prepared by thermal oxidation from the metallic Hf film is used in our MIM capacitors.
