ABSTRACT

The newly proposed mobility fluctuation-based analytical model with its inherent incorporation of dopant number fluctuation in the channel underneath the depletion region addresses the deficiency of the number and percolation theory models. It is evident that the traps near the source end of the channel can cause significant mobility fluctuations apart from surface potential fluctuations impeding the electron flow and enhancing the local threshold voltage variations. Percolation theory-based conduction through the channel of a metal–oxide–semiconductor field effect transistor MOSFET, takes into account the random position and distribution of channel dopants along with the interface trap underneath the active gate region, as well as the rapid surface potential fluctuations out of their local inversion conditions. In very small electronic devices, the alternate capture and emission of carriers at an individual defect site located at the interface of Si:SiO2 of a MOSFET generates discrete switching in the device conductance referred to as a random telegraph signal or random telegraph noise.