ABSTRACT
Resistive switches are two-terminal devices that offer a nonvolatile switching behavior when applying voltage pulses. Complementary resistive switches alleviate size limitations for passive crossbar array memory devices by the elimination of sneak paths because of high-resistive storing states. Since CRS behavior should result for all bipolar resistive switches connected antiserially, the occurrence of CRS behavior is a good indicator for model consistency. In an alternative approach, antiserially connected bipolar resistive switches are applied to form a complementary resistive switch (CRS). Complementary resistive switches alleviate size limitations for passive crossbar array memory devices by the elimination of sneak paths because of high-resistive storing states. Since the CRS cells consist of two antiserially connected bipolar resistive elements, for example, electrochemical metallization elements, it is straightforward to use their corresponding compact simulation models for circuit simulation. First, a basic model is applied. In the next step, dynamical models are applied.
