ABSTRACT
The memristor is utilized as a storage element; the memristor shows many advantageous features for memory design, such as nonvolatility, linearity, lower power dissipation, and good scalability. The hybrid cell utilizes ambipolar transistors; the ambipolar characteristics of this type of transistor allow for the fast and accurate control of the memristance in the proposed memory cell. The chapter provides a brief review of the memristor. It discusses the operational features of an ambipolar transistor and introduces the macroscopic model used in this manuscript for simulation. The chapter presents the operational features of the proposed memory cell inclusive of the WRITE and READ operations. It also presents extensive simulation results to assess the performance of the proposed memory cell. The chapter also provides a comparative discussion with respect to other memristor-based memory cells. It analyses the proposed memory cell with respect to its complementary metal oxide semiconductor feature size.
