ABSTRACT

This chapter demonstrates a novel, low-stress process for transferring thermal chemical vapor deposition (CVD) single-layer graphene from copper foils to destination substrates. It explores a transfer process that is easy and of low stress to graphene; the number of layers and quality of the as-grown graphene and hydrogen-terminated graphene were evaluated by Raman spectroscopy. The chapter shows that the resistance of graphene can be tuned by exposure to remote hydrogen plasma for different periods of time. Graphene film can be synthesized on catalyst layers such as copper and nickel foil by using CVD. Graphene was grown by thermal CVD on copper foils of 50 μm thickness in a gas mixture of methane and hydrogen at a temperature about 1000°C at 1 Torr gas pressure or lower. The distance between graphene and the plasma ball was about 10 cm with a metal screen between the plasma and the graphene.