ABSTRACT
In this chapter, the authors present the asymmetric characteristic fluctuation of the random interface traps (ITs) in 16-nm-gate High-κ/metal-gate (HKMG) metal-oxide semiconductor field-effect transistors (MOSFETs). Random ITs at the 2D interface of the hafnium oxide (HfO2)/silicon of the 16-nm-gate HKMG N-MOSFETs are incorporated into an experimentally validated 3D device simulation to quantify the random ITs-fluctuated characteristics. The asymmetric random dopant fluctuations (RDF) on device characteristics was studied for 16-nm-gate HKMG metal–oxide–semiconductor field effect transistor (MOSFET) devices. Except process variation effect, RDF, as one of the known major intrinsic parameter fluctuations, complicates device manufacturing and degrades device characteristics in the nanometer scale complementary metal–oxide semiconductor device era. HKMG technology has been a key way to suppress RDF-induced variability and reduce leakage current; however, HKMG may introduce random ITs at a high-κ/silicon interface and such IT fluctuation degrades device characteristics considerably. For the RDF simulation, the authors mainly follow the simulation procedure reported in their work.
