ABSTRACT
Graphene is emerging as a wonder material for future radiofrequency electronics and is mechanically compatible with the ubiquitous integration on arbitrary substrates—rigid, flexible, stretchable, and transparent. Radiofrequency transistors based on chemical vapor deposition (CVD) graphene and incorporating plasma-assisted atomic layer-deposited gate dielectric are constructed and examined. Achieving both high-frequency unity-gain frequency (ft) and maximum oscillation frequency (fmax) is critical for the realization of graphene-based advanced active radio-frequency (RF) circuits such as amplifiers and oscillators. The chapter examines transistors based on CVD graphene. Transistors incorporate scaled plasma-assisted atomic-layer-deposited gate dielectrics and use an RF layout designed for targeting improved RF performance. The RF extrinsic ft and fmax are both in the GHz regime. Several-port RF measurements were taken in the ground–signal–ground (G-S-G) configuration and collected using an Agilent PNA sampling in the 10 MHz–50 GHz range. Top-gated, gate-last RF transistor structures in the G–S–G layout configuration are constructed using the process flows.
