ABSTRACT
This chapter outlines the graphene-on-diamond technology, which enables the fabrication of graphene-on-diamond devices and interconnects with a substantially enhanced breakdown current density. Graphene is a promising material for future electronics owing to its extremely high carrier mobility, thermal conductivity, saturation velocity, and ability to integrate with almost any substrate. Synthetic diamond is a natural candidate for use as a bottom dielectric in graphene devices, which can perform the function of a heat spreader. The surface roughness of the synthetic diamond substrate plays an important role in reducing electron scattering at the graphene—diamond interface and increasing the electron mobility, μ. Graphene and few-layer graphene (FLG) were prepared by exfoliation from the bulk highly oriented pyrolytic graphite to ensure quality and uniformity in thickness. FLG supported on substrates or embedded between dielectrics preserves its transport properties better than single-layer graphene. It is easier to break carbon nano-tubes-metal than the graphene-metal contact thermally.
