ABSTRACT
A qualitative comparison of various energy band gap equations is taken to view the effects of temperature outside room temperature. The role of temperature has been established in semiconductors as one factor affecting the band gap. In carbon nanotube field-effect transistors (CNTFETs), temperature has been neglected due to its small contribution of affecting the band gap, at room temperature, as opposed to how temperature affects silicon base semiconductors. It is also observed that the current of the CNTFET is a function of energy gap, diameter, defect of CNT, chiral vectors, chiral angel as well as temperature. The research is specifically focused on the current–voltage characteristics of CNTFET considering the temperature variations. The need of CNTFET arises from the fact that most of the transistors design encounters a lot of problems during its operation in a very low-power supply. Therefore, CNTFET can be a good solution, which provides more reliability even during aggressive scaling.
