ABSTRACT
Single-wall carbon nanotubes (CNTs) have a large intrinsic mobility and are expected to be useful as a new electronic material. According to the simulation work, a CNT random network is tolerant to m-CNT contamination. Furthermore, CNT random networks are compatible with solution processes such as s-CNT purification and printing fabrication. The device yield and performance of a CNT random network thin film transistor (TFT) can be increased by the use of purified s-CNTs. Therefore, it is crucial to mitigate the effect of m-CNTs when making use of CNTs as semiconducting materials. The authors develop a fabrication technology for printed CNT–TFTs. All electrodes, insulators, and CNT channels were directly printed without additional patterning processes. The TFT characteristics clearly demonstrated the advantages of the purified s-CNT ink. The key issue is successful fabrication of printed TFTs in order to realize printed electronics, and the performance of the TFTs strongly affects the application field.
