Study of Lanthanum Incorporated HfO2 Nanoscale Film Deposited as an MOS Device Structure Using a Dense Plasma Focus Device

This chapter investigates the microstructure and electrical properties of HfO₂ and La₂O₃/HfO₂ gate stacks deposited using a novel deposition technique, namely the dense plasma focus (DPF) under optimized conditions. HfO₂ and La₂O₃ targets having high purity and supplied by M/s Semiconductor Technology in the form of a disk are inserted at the top of the anode to deposit thin films using the DPF machine subsystem. The capacitance is measured for two DPF shots when one shot is of hafnium and the other is of lanthanum giving rise to the lanthanum-incorporated hafnium-based gate dielectric. The important parameters such as the dielectric constant, electrical thickness, oxide capacitance, flat-band voltage, and the threshold voltage are determined and tabulated from the measurements performed at 1 MHz for the lanthanum-incorporated hafnium-based gate dielectric stacks metal–oxide–semiconductor device deposited using two DPF shots. The chapter also investigates other important parameters through electrical characterization like flat-band voltage and oxide-charge density extracted from a highfrequency C–V curve.