ABSTRACT
Zinc oxide (ZnO) nanorod films on a porous silicon (PS) template using the chemical bath deposition (CBD) technique. In this chapter, the authors demonstrate that the conductivity type (n- or p-type) of ZnO nanorods can be changed by controlling the seed layer preparation. ZnO nanorods or nanowires are generally synthesized by four main techniques: chemical vapor deposition, metal–organic vapor deposition, aqueous solution method, and electrodeposition. The achievement of reproducible p-type ZnO still remains one of the significant obstacles to wide applications of ZnO in a p–n junction device. Well-directed ZnO nanorods are grown on n-type PS substrates via CBD. N-type ZnO nanorods are changed to p-type by the N-doping process achieved by NH3 gas during the formation of seed layers. The N-doped ZnO nanorod films can form a good p–n heterojunction with the n-type PS substrate.
