ABSTRACT
Nanowire field effect transistors (NFETs), Fin field effect transistors (FinFETs), and other three-dimension architectures are progressively replacing the bulk metal-oxide semiconductor field-effect transistor architecture in a complementary metal-oxide semiconductor silicon technology. The superior electrical integrity of FinFETs and nanowires resulting in low leakage current at the off-state, as compared to much leakier bulk architectures. The authors show that phonon scattering is considered in the whole device, including the source/drain regions. They focus on gate-all-around nanowire transistor. The authors establish nonequilibrium Green's function simulations to study the effect of a single dopant unintentionally present in the channel of an NFET. The asymmetrical location of the donor in the middle of the channel allows the electrons near the source to tunnel into the donor potential and then be heated up to the top of the potential barrier via inelastic phonon processes. A case of the NFET with a donor in the channel considering only the elastic phonon scattering is shown for comparison.
