ABSTRACT
Sustaining Moore’s law of doubling CMOS transistor density every
24 months will require not only shrinking of the transistor
dimensions, but also introduction of new materials and new device
architectures to achieve the highest performance per watt of power
dissipation. Compound semiconductor-or III-V-based quantumwell
field-effect transistors (QWFETs) or heterostructure field-effect
transistors (HFETs) have recently emerged as a promising transistor
option for future ultra-low-power logic applications. This chapter
reviews the opportunities and challenges in this exciting field of
research.
