ABSTRACT
In recent years tunnel FETs (TFETs) have attracted a great
deal of attention. However, experimental devices to date exhibit
a performance substantially inferior compared to conventional
MOSFET devices. Here we will illuminate some principal device
physics aspects of TFETs and elaborate on the impact of device
structure, transistor dimensions and the choice of material on the
performance of TFETs. In particular, the use of heterostructures and
nanowires/tubes will be analyzed in detail suggesting solutions to
the most relevant TFET issues.
