ABSTRACT
This chapter is dedicated to nonvolatile resistive switching mem-
ories RRAMs. RRAM, built as MIM capacitor-like structure where
the insulator layer (I), is made of one of two kinds of materials,
transition metal oxides or solid-state electrolytes. Progress in
materials and device structures of RRAMs is reviewed with certain
emphasis on physical mechanisms for resistive switching and also
electronic conduction in the low resistance state for different
insulators and metal electrode materials. Basic nonvolatile memory
characteristics for RRAMs, including switching voltage, endurance
and scalability, are discussed.
