ABSTRACT
This chapter provides an overview of the main advantages provided
by planar undoped channel fully depleted SOI devices. The more
important characteristics of this technology are its excellent elec-
trostatic integrity, drivability, withinwafer variability and scalability.
All of these properties are discussed through silicon data and TCAD
analyses. Solutions for multiple VT are also reported. Finally, the
scalability of FDSOI can be ensured by its evolution from planar
towards nanowires. We discuss the dimensional control on both
single and arrays of gate-all-around nanowires transistors with
high-κ and metal gates thanks to carrier mobility and interface
measurements.
