ABSTRACT
In this chapter, a silicon-on-diamond (SOD) substrate technology
is presented, in which diamond replaces buried silicon dioxide
used in conventional silicon-on-insulator (SOI) wafers. Diamond
is interesting because of its high thermal conductivity (compared
to SiO2) while maintaining high resistivity (electrostatic control).
SOD technology is thus ideally suited for SOI applications requiring
enhanced thermal management. Three major topics are addressed
in this chapter in which we aimed at (i) to improving quality
of submicrometric diamond films deposited on silicon substrates,
(ii) proposing novel thin diamond films incorporation approaches
based on molecular bonding and (iii) processing state-of-the-art
MOSFETs on such SOD substrates andmeasuring their electrical and
thermal properties. We demonstrate that diamond can be efficiently
integrated in a thin-film configuration and that it leads to significant
improvement in heat dissipation, in particular with micrometric to
submicrometric heat sources.
