ABSTRACT
This chapter deals with the process of advanced substrate wafers
based on SiGe alloy film on insulator (SGOI) and germanium on
insulator (GeOI) and innovative device integration on the given
substrates. We review the main results and challenges on the
issues to address the materials fabrication side as well as device
architectures. Various realization schemes are demonstrated for the
substrate fabrication such as Ge enrichment, SmartCut TM
and hybrid
epitaxial growth. Record low crystallographic defects density in the
range less than 106 cm−2 has been obtained by using different techniques. Fully depleted CMOS, impact ionization MOSFETs and
tunnel FETs have successfully been cointegrated on the obtained
state-of-the-art substrates whereas GeOI offers the opportunity to
exploit these novel architectures.
