ABSTRACT
This chapter discusses the integration flow of resistive switching random access memory (RRAM) with one transistor/one resistor structure on Cu process and Al process, with attention being focused on low cost and high reliability. In general, nonvolatile memory (NVM) can be divided into two major parts. Most NVM devices in mobile and embedded applications are based on charge storage, which can also be called as capacitive memories like flash, and the other NVM devices are based on various kinds of resistance switching mechanism of inorganic, organic, and molecular materials, which can also be called as resistive memories. The most possible application for RRAM on the current technology stage is the embedded application for mobile storage demand. The storage-class memory can be defined as a memory that combines the benefits of a solid-state memory, such as high performance and robustness, with the archival capabilities and low cost of conventional hard-disk magnetic storage.
