ABSTRACT
In modern static random-access memory, the two predominant single event effects are the single event upset and multiple upsets (MUs). MUs are topological errors in neighboring cells. If the cells belong to the same logical word, they are named multiple bit upsets; otherwise they are labeled as multiple cell upsets (MCUs). When experimentally measuring MCUs, it is mandatory to distinguish multiple independent failures from a cluster of nearest neighbor upset from a single multi-cell upset caused by a single energetic particle and signature of errors due to a hit in redundancy latch or sense amplifier that may upset an entire row or column from an MCU signature. The effect of supply voltage on the radiation susceptibility is well known: the higher the voltage, the lower the susceptibility since the charge storing the information is increased proportionally to the supply voltage. However, the effect of the supply voltage on the MCU rate is not documented.
