ABSTRACT
This chapter focuses on the particular set belonging to the 1T- dynamic random access memory (DRAM) family: the so-called floating-body (FB) 1T-DRAM cells. FB memories take advantage of, in principle, a harmful effect that appears in partially depleted (PD)-Silicon-on-Insulator (SOI) transistors: the kink effect. While kink effect or FB effect presents a problem in logic and analog applications of PD-SOI devices, it could be exploited as the underlying principle for alternative 1T-DRAM cells. One of the most questioned drawbacks of FB/1T-DRAM has been their scalability. The scalability of FD-SOI transistors requires a decrease in the film thickness in order to have a good control of short channel effects. Different structures have been proposed during 2013 sharing the concept of multibody memories, that is, the electrostatic and physical separation of stored carriers and sensing carriers: The single transistor quantum well 1T-DRAM, Convex channel 1T-DRAM, and A-RAM family.
