Research on discrete bipolar switching effect in memristor device

Resistive switching behavior was first reported in 1962 [1]. From then on, a large variety of materials have been found to exhibit I-V hysteresis characteristic. Recently, a group of scientists [2] from Hewlett-Packard have presented us a layered platinum-titanium oxide-platinum resistance switching nanocell and reminded us that the resistive switching element could be mathematically described by the concept of memristor, which was first proposed by Leon Chua in 1971 [3].