ABSTRACT
In this chapter we review recent experimental findings on the role
of H incorporated during postgrowth hydrogenation on defects in
GaNP and GaNAs alloys. The main emphasis is on Ga interstitial
(Gai )-related defects that are known to be among the dominant
nonradiative recombination centers in dilute nitrides. Fromoptically
detected magnetic resonance (ODMR) studies, hydrogen is shown
to cause activation of new Gai -related defects in GaNP due to
the formation of Gai-H complexes. Markedly different H behavior
is, however, observed in GaNAs, where H efficiently passivates
Gai -related defects present in the as-grown material. Possible
mechanisms responsible for the observed difference in the H
behavior in GaNP and GaNAs are also discussed.
