ABSTRACT
The experimental apparatus of the device preparation is the multi OLED coating system in this project. The experiment of raw material of CuPc semiconductor material purity is 99.9%, evaporation temperature control at 350°C, Organic vacuum evaporation coating prepared by organic material CuPc, gate electrode(Al) and the collector (Cu) by DC magnetron sputtering preparation, emitter(ITO) by radiofrequency magnetron sputtered preparation. The production sequence is as follows. First, we should make gold film evaporation source electrode on the glass substrate. Second, protect the first layer of CuPc film evaporation, and the fabrication of thin film aluminum base and a two layer of CuPc thin films. Finally, making gold evaporated the drain electrode (Wang et a1. 2010). The following sample preparation conditions, the evaporation temperature of CuPc is 400°C, the temperature of the substrate at room temperature of 20°C, CuPc film under two layer film thickness control by the evaporation time and the evaporation speed is about 3nm /min. CuPc thin film on the lower two layers of film thickness was about
70nm, 130nm, the base(Al) of the semiconductive thin film thickness is about 20nm. The device structure as shown in figure 1.
