ABSTRACT
In this paper, establish the physical model according to the actual organic static induction transistor (OSIT). The actual OSIT structure is shown as in the Figure 1 (a), adopt P-type organic semiconductor material copper phthalocyanine, and fabricate the thin film by the vacuum vapor deposition method. The actual OSIT structure is using Au/CuPc/Al/ CuPc/Au five layers. At the gate of OSIT, the depletion is formed by a Schottky barrier with the Al / CuPc interface.
