Memory and electrical properties of (100)-oriented aluminum nitride thin films prepared by radio frequency magnetron sputtering

The AlN thin films was promising piezoelectric materials for GHz-band surface acoustic wave SAW devices because of its high ultrasonic velocity, piezoelectricity and thermal stability. In addition, AlN thin films exhibited (002), (100), and (103) an oriented hexagonal wurtzite structure and wide band gap in the range 5.9-6.2 eV [13]. For the ultrasonic velocity properties, the coupling coefficient was an important parameter and chosen for the SAW devices. According to previous study, the coupling coefficient of the (100)-oriented AlN thin films is larger than the (002)-oriented thin films.