ABSTRACT
Various techniques, such as electron beam evaporation, ion beam assisted deposition, and ion implantation are used for growth of the IGZO thin films. For example, Jeong et al. got the IGZO thin films by co-depositing the Ga:In2O3 and Zn:In2O3 targets (Jeong et al. 2011). However, the vacuum processes have disadvantages of inefficiency and source wasting because IGZO particles are exhausted onto inner wall of the vacuum chamber as well as coated onto substrate. As we know, fabricating the Transparent Conduction Oxides (TCOs) thin films in a non-vacuum process is an important issue for lowering the fabrication price and decreasing the source wasting (Toki et al. 1997). However, only few efforts have been made to systematically investigate the TCOs by a SPM method (Wu et al. 2013, Wu et al. 2013). In this study, the first important issue is that the nano-scale In2O3,
1 INTRODUCTION
Transparent Amorphous Oxide Semiconductors (TAOSs) thin films which exhibit high mobility, excellent uniformity, good transparency, and applicability for the low-temperature process (for polymer or plastic substrate) have potential to serve as active layer in TFTs. Recently, TAOSs thin films such as Sn-Zn-O (SZO), In-Zn-O (IZO), and In-Ga-Zn-O (IGZO) have received considerable attention in the large-area Flat Panel Display (FPD) industry since they may overcome the difficulties encountered in the amorphous α-Si:H) and polycrystalline silicon TFTs (poly-Si TFT) technologies (Nomura et al. 2004). IGZO is a semiconducting material and IGZO is used as the TFT backplane of FPDs. IGZO-TFT was developed by Professor H. Hosono’s group at Tokyo Institute of Technology and Japan Science and Technology Agency (JST) in 2003 for crystalline IGZO-TFT (Nomura et al. 2003) and in 2004, for amorphous IGZO-TFT (Nomura et al. 2004). IGZO-TFT has 20-50 times higher mobility than that of amorphous silicon, which has been used for
Ga2O3, and ZnO oxide powders (with mole ratio In2O3:Ga2O3:ZnO = 1:1:2, abbreviated as IGZO) were prepared by putting the micro-scale oxide powders into nano-ground machine with the addition 1 wt% KD1 dispersant. Then the 6 wt% IGZO particles were dispersed into Isopropyl Alcohol (IPA) to get the solution for SPM to prepare the IGZO thin films. We would investigate the effect of annealing temperature on the characteristics of the IGZO thin films.
